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| Band Switching Diodes MA4X862 Silicon epitaxial planar type Unit : mm For band switching I Features * Two electrically isolated elements incorporated * Small diode capacitance CD * Low forward dynamic resistance rf * Optimum for a band switching of a tuner 2.8 - 0.3 0.65 0.15 + 0.2 1.5 - 0.05 + 0.25 0.65 0.15 0.5 R 1.9 0.2 0.95 4 0.5 1 2.9 - 0.05 + 0.2 0.95 + 0.1 3 0.4 - 0.05 2 0.2 1.1 - 0.1 + 0.2 Parameter Reverse voltage (DC) Forward current (DC) Single Double Symbol VR IF Topr Tstg Rating 35 100 75 -25 to +85 -55 to +100 Unit V mA mA/Unit C C 0.4 0.2 Operating ambient temperature Storage temperature 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin) Marking Symbol: M1I Internal Connection 4 3 1 2 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance Symbol IR VF CD rf1*1 rf2 *2 Conditions VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Min Typ 0 to 0.1 0.1 to 0.3 0.8 Max 100 1.0 1.2 0.65 0.98 0.16 - 0.06 I Absolute Maximum Ratings Ta = 25C + 0.1 Unit nA V pF Note) 1 Rated input/output frequency: 100 MHz 2 *1 : rf measuring instrument: Nihon Koshuha Model TDC-121A *2 : rf measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER 0.6 - 0 + 0.1 0.4 - 0.05 1.45 + 0.1 1 MA4X862 IF VF (Between 1 - 4) 102 12 Band Switching Diodes IF VF (Between 2 - 3) 100 30 1 4 2 3 100 30 12 43 IR VR (Between 1 - 4) Ta = 25C 10 43 Forward current IF (mA) Forward current IF (mA) 10 3 Ta = 85C 25C 50C Reverse current IR (pA) 10 3 1 0.3 0.1 0.03 0.01 1 1 0.3 0.1 0.03 - 20C 10-1 Ta = 85C 50C 25C - 20C 10-2 10-3 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 60 Forward voltage VF (V) Forward voltage VF (V) Reverse voltage VR (V) IR VR (Between 2 - 3) 100 30 Ta = 25C 12 rf f IF = 2 mA Ta = 25C rf Tester: YHP4191A 8 rf f IF = 2 mA Ta = 25C rf Tester: TDC-121A 6 Forward dynamic resistance rf () 10 Reverse current IR (pA) 10 1 3 1 0.3 0.1 0.03 0.01 4 3 2 8 6 Forward dynamic resistance rf () 4 4 2 2 0 10 20 30 40 50 60 0 1 2 3 5 10 20 30 50 100 0 1 3 10 30 100 Reverse voltage VR (V) Frequency f (MHz) Frequency f (MHz) rf IF 2.4 rf IF 3.2 1.6 CD VR 1.4 f = 1 MHz Ta = 25C Forward dynamic resistance rf () 2.0 Forward dynamic resistance rf () f = 1 000 MHz Ta = 25C rf Tester: TDC-121A 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0.1 Diode capacitance CD (pF) f = 1 000 MHz Ta = 25C rf Tester: YHP4191A 1.2 1.0 0.8 0.6 0.4 0.2 0 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 0.3 1 3 10 30 100 0 10 20 30 40 50 Forward current IF (mA) Forward current IF (mA) Reverse voltage VR (V) 2 Band Switching Diodes IF(surge) tW 1 000 300 100 30 10 3 1 0.3 0.1 0.03 Ta = 25C MA4X862 Forward surge current IF(surge) (A) 0.1 0.3 1 3 10 30 Pulse width tW (ms) 3 |
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